Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4939933